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Teknillinen korkeakoulu. Elektronifysiikan laboratorio
URI:
http://urn.fi/URN:NBN:fi:au:cn:28669A
name
Teknillinen korkeakoulu. Elektronifysiikan laboratorio
Authored works
Works contributed to
11th Nordic Semiconductor Meeting : Espoo, Finland, June 11-13, 1984
A physical Si[sub 1-x]Ge[sub x]/Si heterojunction bipolar transistor model for device and circuit simulation
Application of the collection probability of a solar cell for extracting recombination parameters from the spectral response
Diffusion behavior of metal impurities and gettering efficiency : a review of publications
Energy band characteristics of a 1-D multilayer structure consisting of potential steps
Fabrication and modelling of SOI and GaAs MSM photodetectors and a GaAs-based integrated photoreceiver
Hels. Univ. Technol. Radio Lab. publ., Rep. S
Helsinki International Summer School on Optoelectronics : Helsinki, June 13-16, 1984
Improved analytical current voltage characteristics of a solar cell
Kvanttielektroniikka
Light emission from silicon-based materials
MBE growth of material systems for semiconductor nanostructures
Measurement of thermal conductivity of diamond thin films by the ac calorimetric method
Mobility reduction in short channel
Optical activation of copper in silicon studied by carrier lifetime measurements
Physics-based AlGaAs/GaAs HBT model for circuit simulation
Process development and device modelling of gallium arsenide heterojunction bipolar transistors
Processing of high efficiency silicon solar cells
The potential of diamond for applications in microelectronics
Ultrahigh vacuum plasma oxidation in the fabrication of ultrathin silicon dioxide films
Works about Teknillinen korkeakoulu. Elektronifysiikan laboratorio
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