A physical Si[sub 1-x]Ge[sub x]/Si heterojunction bipolar transistor model for device and circuit simulation

A physical Si[sub 1-x]Ge[sub x]/Si heterojunction bipolar transistor model for device and circuit simulation

datePublished

• 1994

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 382368
• propertyID: FI-MELINDA value: 000776998
• propertyID: skl value: fx382368

isbn

• 9512221543

isPartOf

• Fennica
• Report / Helsinki University of Technology, Radio Laboratory, S

name

• A physical Si[sub 1-x]Ge[sub x]/Si heterojunction bipolar transistor model for device and circuit simulation

numberOfPages

• 19, [2] s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Otaniemi organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu