Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes

Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes

datePublished

• 1992

description

• kuvitettu
• Nimiösivulla myös: Technical Research Centre of Finland, Semiconductor Laboratory, Espoo.
• Tiivistelmä ja 7 erip. - Tiivistelmä ilm. myös erillisenä

identifier

• propertyID: FI-FENNI value: 276720
• propertyID: FI-MELINDA value: 003147141
• propertyID: skl value: fx276720

isbn

• 9516663575

isPartOf

• Acta polytechnica Scandinavica. Ci, Civil engineering and building construction series
• Fennica

name

• Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes

numberOfPages

• 29, [87] s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Helsinki organizer: Teknillisten tieteiden akatemia

publisher

• Teknillisten tieteiden akatemia