Process development and device modelling of gallium arsenide heterojunction bipolar transistors

Process development and device modelling of gallium arsenide heterojunction bipolar transistors

datePublished

• 2001

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 696123
• propertyID: FI-MELINDA value: 002978042
• propertyID: skl value: fx696123

isbn

• 9512254387

isPartOf

• Fennica
• Tekniska högskolan. Radio- och elektroniklaboratorier

name

• Process development and device modelling of gallium arsenide heterojunction bipolar transistors

numberOfPages

• xiii, 133, [2] sivu

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Espoo organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu