Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:W00597358800
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  • Iron gettering in silicon using doped layers and bulk defects
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Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00598714702
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  • 9789526043562
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  • Iron gettering in silicon using doped layers and bulk defects

Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00597358802
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  • 9789526043579
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  • Iron gettering in silicon using doped layers and bulk defects

Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00597358801
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  • Iron gettering in silicon using doped layers and bulk defects

Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00598714701
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  • Iron gettering in silicon using doped layers and bulk defects

Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00597358803
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Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00597358800
datePublished
  • 2011
description
  • Artikkeliväitöskirjan yhteenveto-osa ja 6 eripainosta.
  • kuvitettu
identifier
  • propertyID: FI-FENNI value: 985183
  • propertyID: FI-MELINDA value: 005973588
  • propertyID: skl value: fx985183
isbn
  • 9789526043562
isPartOf
name
  • Iron gettering in silicon using doped layers and bulk defects
numberOfPages
  • xi, 33, [35] sivu
P60048
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publication
  • location: Espoo organizer: Aalto University, School of Electrical Engineering
publisher
  • Aalto University, School of Electrical Engineering

Iron gettering in silicon using doped layers and bulk defects

URI: http://urn.fi/URN:NBN:fi:bib:me:I00598714700
bookFormat
datePublished
  • 2011
description
  • Artikkeliväitöskirjan yhteenveto-osa ja 2 eripainosta.
  • Nimeke nimiösivulta.
identifier
  • propertyID: FI-MELINDA value: 005987147
isbn
  • 9789526043579
isPartOf
name
  • Iron gettering in silicon using doped layers and bulk defects
numberOfPages
  • 3 verkkoaineistoa (57 s.)
P60048
P60050
publication
  • location: Espoo organizer: Aalto-yliopisto
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