Electroreflectance of polycrystalline ZnS thin film grown by Atomic Layer Epitaxy method

Electroreflectance of polycrystalline ZnS thin film grown by Atomic Layer Epitaxy method

datePublished

• 1981

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 4773
• propertyID: FI-MELINDA value: 003363034
• propertyID: skl value: f811390

isPartOf

• [Helsinki University of Technology publications in materials science and metallurgy]
• Fennica

name

• Electroreflectance of polycrystalline ZnS thin film grown by Atomic Layer Epitaxy method

numberOfPages

• [2], 6 s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Espoo organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu