First principles calculations for point defects in 2H-, 3C- and 4H-SiC polytypes

First principles calculations for point defects in 2H-, 3C- and 4H-SiC polytypes

datePublished

• 2001

description

• kuvitettu
• Tiivistelmä ja 6 erip.

identifier

• propertyID: FI-FENNI value: 703302
• propertyID: FI-MELINDA value: 003333072
• propertyID: skl value: fx703302

isbn

• 9512257483
• 9512257491

isPartOf

• Dissertation of Laboratory of Physics / Helsinki University of Technology
• Fennica

name

• First principles calculations for point defects in 2H-, 3C- and 4H-SiC polytypes

numberOfPages

• 51, [87] sivu

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Espoo organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu