Modeling of trapping and abrupt doping effects in MESFET's using R-dynamic

Modeling of trapping and abrupt doping effects in MESFET's using R-dynamic

datePublished

• 1994

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 413796
• propertyID: FI-MELINDA value: 000794154

isbn

• 9512223023

isPartOf

• Fennica
• Helsinki University of Technology. Faculty of Electrical Engineering. Circuit Theory Laboratory

name

• Modeling of trapping and abrupt doping effects in MESFET's using R-dynamic

numberOfPages

• ii, 13, [2] s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Espoo organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu