Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures

URI: http://urn.fi/URN:NBN:fi:bib:me:W00046065300
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inLanguage
  • en
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  • Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures
P60049

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Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures

URI: http://urn.fi/URN:NBN:fi:bib:me:I00046065301
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isPartOf
name
  • Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures
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Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures

URI: http://urn.fi/URN:NBN:fi:bib:me:I00046065300
datePublished
  • 2006
description
  • kuvitettu
  • Tiivistelmä ja 7 erip.
identifier
  • propertyID: FI-FENNI value: 841897
  • propertyID: FI-MELINDA value: 000460653
  • propertyID: skl value: fx841897
isbn
  • 9521516682
isPartOf
name
  • Ultrafast capture and relaxation of carriers in InGaAs semiconductor quantum well nanostructures
numberOfPages
  • vii, 42, [56] sivu
P60048
P60050
publication
  • location: Tampere organizer: Tampereen teknillinen korkeakoulu Tampereen teknillinen yliopisto. Optoelektroniikan tutkimuskeskus
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