Simulations on the electrical characteristics of Si, SiC and diamond junction and Schottky power diodes

Simulations on the electrical characteristics of Si, SiC and diamond junction and Schottky power diodes

datePublished

• 1992

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 334745
• propertyID: FI-MELINDA value: 005358010
• propertyID: skl value: f932662

isPartOf

• Fennica
• Report / Helsingin teknillinen korkeakoulu, radiolaboratorio. S

name

• Simulations on the electrical characteristics of Si, SiC and diamond junction and Schottky power diodes

numberOfPages

• 47, [2] s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Otaniemi organizer: Helsinki University of Technology, Faculty of Electrical Engineering, Electron Physics Laboratory

publisher

• Helsinki University of Technology, Faculty of Electrical Engineering, Electron Physics Laboratory