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Laser induced recrystallisation and defects in ion implanted hexagonal SiC
URI:
http://urn.fi/URN:NBN:fi:bib:me:W00384545500
contributor
Makarov, V. V
Teknillinen korkeakoulu. Fysiikan laboratorio
inLanguage
en
isPartOf
Fennica
name
Laser induced recrystallisation and defects in ion implanted hexagonal SiC
P60049
<http://rdaregistry.info/termList/RDAContentType/1020>
Instances
1979 : Teknillinen korkeakoulu
View this in Finna
Laser induced recrystallisation and defects in ion implanted hexagonal SiC
URI:
http://urn.fi/URN:NBN:fi:bib:me:I00384545500
datePublished
1979
description
kuvitettu
identifier
propertyID:
FI-FENNI
value:
101733
propertyID:
FI-MELINDA
value:
003845455
propertyID:
skl
value:
fx101733
isbn
951751705X
isPartOf
Fennica
Research report / Helsinki University of Technology. Laboratory of physics
name
Laser induced recrystallisation and defects in ion implanted hexagonal SiC
numberOfPages
[3], 7, [4] s.
P60048
<http://rdaregistry.info/termList/RDACarrierType/1049>
P60050
<http://rdaregistry.info/termList/RDAMediaType/1007>
publication
location:
Espoo
organizer:
Teknillinen korkeakoulu
publisher
Teknillinen korkeakoulu
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