Fabrication of a MOS diode with a nanostructured c-Si/SiO[sub 2] layer

URI: http://urn.fi/URN:NBN:fi:bib:me:W00017200000
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contributor
inLanguage
  • en
isPartOf
name
  • Fabrication of a MOS diode with a nanostructured c-Si/SiO[sub 2] layer
P60049

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Fabrication of a MOS diode with a nanostructured c-Si/SiO[sub 2] layer

URI: http://urn.fi/URN:NBN:fi:bib:me:I00017200000
datePublished
  • 1997
description
  • kuvitettu
identifier
  • propertyID: FI-FENNI value: 591383
  • propertyID: FI-MELINDA value: 000172000
  • propertyID: skl value: fx591383
isbn
  • 951223815
  • 9512238152
isPartOf
name
  • Fabrication of a MOS diode with a nanostructured c-Si/SiO[sub 2] layer
numberOfPages
  • 9 s.
P60048
P60050
publication
  • location: Espoo organizer: Teknillinen korkeakoulu
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