Analysis of the process [sup 28]Si(P,P[sub 0])[sup 28]Si and [sup 28]Si(P,P[sub 1])[sup 28]Si in the excitation energy region 9.195<E[sub x]<10.474 MeV
Analysis of the process [sup 28]Si(P,P[sub 0])[sup 28]Si and [sup 28]Si(P,P[sub 1])[sup 28]Si in the excitation energy region 9.195<E[sub x]<10.474 MeV
Analysis of the process [sup 28]Si(P,P[sub 0])[sup 28]Si and [sup 28]Si(P,P[sub 1])[sup 28]Si in the excitation energy region 9.195<E[sub x]<10.474 MeV
Analysis of the process [sup 28]Si(P,P[sub 0])[sup 28]Si and [sup 28]Si(P,P[sub 1])[sup 28]Si in the excitation energy region 9.195<E[sub x]<10.474 MeV