Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

URI: http://urn.fi/URN:NBN:fi:bib:me:W00661936200
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  • Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors
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Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

URI: http://urn.fi/URN:NBN:fi:bib:me:I00661936202
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  • 9789526055473
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  • Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

URI: http://urn.fi/URN:NBN:fi:bib:me:I00661936201
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  • Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

URI: http://urn.fi/URN:NBN:fi:bib:me:I00661936203
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  • Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors
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Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors

URI: http://urn.fi/URN:NBN:fi:bib:me:I00661936200
datePublished
  • 2014
description
  • Artikkeliväitöskirjan yhteenveto-osa ja 4 eripainosta.
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  • propertyID: FI-MELINDA value: 006619362
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  • 9789526055466
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  • Computational study of isovalent group-V impurity doping and native point defects of III-V compound semiconductors
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  • 48, [36] s.
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  • location: Espoo organizer: Aalto University, School of Science, Applied Physics, COMP
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  • Aalto University, School of Science, Applied Physics, COMP

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