First-principles study of nitrogen in GaAsN : defects and interfaces

URI: http://urn.fi/URN:NBN:fi:bib:me:W00411936900

author

Komsa, Hannu-Pekka

contributor

Tampereen teknillinen yliopisto

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Fennica

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First-principles study of nitrogen in GaAsN : defects and interfaces

P60049

<http://rdaregistry.info/termList/RDAContentType/1020>

-, e-book
2008 : Tampereen teknillinen yliopisto. Optoelektroniikan tutkimuskeskus

First-principles study of nitrogen in GaAsN : defects and interfaces

URI: http://urn.fi/URN:NBN:fi:bib:me:I00411936901

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First-principles study of nitrogen in GaAsN : defects and interfaces

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First-principles study of nitrogen in GaAsN : defects and interfaces

URI: http://urn.fi/URN:NBN:fi:bib:me:I00411936900

datePublished

2008

description

Artikkeliväitöskirjan yhteenveto-osa ja 7 eripainosta.
kuvitettu

identifier

propertyID: FI-FENNI value: 907166
propertyID: FI-MELINDA value: 004119369
propertyID: skl value: fx907166

isbn

9789521520686

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name

First-principles study of nitrogen in GaAsN : defects and interfaces

numberOfPages

viii, 61, [63] sivu

P60048

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P60050

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publication

location: Tampere organizer: Tampereen teknillinen korkeakoulu Tampereen teknillinen yliopisto. Optoelektroniikan tutkimuskeskus

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First-principles study of nitrogen in GaAsN : defects and interfaces

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First-principles study of nitrogen in GaAsN : defects and interfaces

First-principles study of nitrogen in GaAsN : defects and interfaces