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Liquid-phase epitaxial growth of GaInAsP/InP laser crystals
URI:
http://urn.fi/URN:NBN:fi:bib:me:W00393961800
contributor
Naukkarinen, Kari
Teknillinen korkeakoulu. Fysiikan laboratorio
inLanguage
en
isPartOf
Fennica
name
Liquid-phase epitaxial growth of GaInAsP/InP laser crystals
P60049
<http://rdaregistry.info/termList/RDAContentType/1020>
Instances
1982 : Teknillinen korkeakoulu. Fysiikan laboratorio
View this in Finna
Liquid-phase epitaxial growth of GaInAsP/InP laser crystals
URI:
http://urn.fi/URN:NBN:fi:bib:me:I00393961800
datePublished
1982
description
kuvitettu
identifier
propertyID:
FI-FENNI
value:
6982
propertyID:
FI-MELINDA
value:
003939618
propertyID:
skl
value:
f821870
isPartOf
Fennica
Report / Teknillinen korkeakoulu. Materiaalitieteen ja vuoritekniikan laitos. Prosessimetallurgia : C
name
Liquid-phase epitaxial growth of GaInAsP/InP laser crystals
numberOfPages
[2], 11, [13] s.
P60048
<http://rdaregistry.info/termList/RDACarrierType/1049>
P60050
<http://rdaregistry.info/termList/RDAMediaType/1007>
publication
location:
Espoo
organizer:
Teknillinen korkeakoulu. Fysiikan laboratorio
publisher
Teknillinen korkeakoulu. Fysiikan laboratorio
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