Electronic structure and positron states at vacancies in Si and GaAs

Electronic structure and positron states at vacancies in Si and GaAs

datePublished

• 1986

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 20563
• propertyID: FI-MELINDA value: 003835195
• propertyID: skl value: f861857

isPartOf

• Fennica
• Report / Helsinki University of Technology, Department of Electrical and Communication Engineering, Electronic Circuit Design Laboratory

name

• Electronic structure and positron states at vacancies in Si and GaAs

numberOfPages

• [2], 47 s.

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>

publication

• location: Espoo organizer: Teknillinen korkeakoulu

publisher

• Teknillinen korkeakoulu