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Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes
URI:
http://urn.fi/URN:NBN:fi:bib:me:W00314714100
author
Eränen, Simo
inLanguage
en
isPartOf
Fennica
name
Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes
P60049
<http://rdaregistry.info/termList/RDAContentType/1020>
Instances
1992 : Teknillisten tieteiden akatemia
View this in Finna
Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes
URI:
http://urn.fi/URN:NBN:fi:bib:me:I00314714100
datePublished
1992
description
kuvitettu
Nimiösivulla myös: Technical Research Centre of Finland, Semiconductor Laboratory, Espoo.
Tiivistelmä ja 7 erip. - Tiivistelmä ilm. myös erillisenä
identifier
propertyID:
FI-FENNI
value:
276720
propertyID:
FI-MELINDA
value:
003147141
propertyID:
skl
value:
fx276720
isbn
9516663575
isPartOf
Acta polytechnica Scandinavica : Annotated index
Fennica
name
Studies on the insulated gate bipolar transistors and the wide bandgap semiconductor power diodes
numberOfPages
29, [87] s.
P60048
<http://rdaregistry.info/termList/RDACarrierType/1049>
P60050
<http://rdaregistry.info/termList/RDAMediaType/1007>
publication
location:
Helsinki
organizer:
Teknillisten tieteiden akatemia
publisher
Teknillisten tieteiden akatemia
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