Composition control of GalnAsP grown by gas-source molecular beam epitaxy

Composition control of GalnAsP grown by gas-source molecular beam epitaxy

datePublished

• 1992

description

• kuvitettu

identifier

• propertyID: FI-FENNI value: 259000
• propertyID: FI-MELINDA value: 000713583

isbn

• 9517217900

isPartOf

• Fennica
• Tampereen teknillinen korkeakoulu. Sähkötekniikan osasto. Fysiikka. Raportti

name

• Composition control of GalnAsP grown by gas-source molecular beam epitaxy

numberOfPages

• iv, 74, [1] lehteä

P60048

• <http://rdaregistry.info/termList/RDACarrierType/1049>

P60050

• <http://rdaregistry.info/termList/RDAMediaType/1007>